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Microchip Technology(28120)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Datasheet | Factory Lead Time | Mount | Packaging | Published | Series | Pbfree Code | Part Status | Moisture Sensitivity Level (MSL) | Number of Terminations | ECCN Code | Max Operating Temperature | Min Operating Temperature | Operating Supply Voltage | Length | RoHS Status | Lead Free | Contact Plating | Radiation Hardening | Number of Pins | Additional Feature | Package / Case | Max Supply Voltage | REACH SVHC | Min Supply Voltage | Height | Width | Resistance | Mounting Type | Weight | Operating Temperature | Technology | Operating Supply Current | Operating Mode | Number of Functions | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Time@Peak Reflow Temperature-Max (s) | Base Part Number | Pin Count | Output Type | Surface Mount | Terminal Pitch | JESD-30 Code | Number of Channels | Subcategory | Qualification Status | Ambient Temperature Range High | Number of Elements | Configuration | JEDEC-95 Code | Number of Outputs | Analog IC - Other Type | Case Connection | Applications | Element Configuration | Power Dissipation | Supply Current-Max (Isup) | Propagation Delay | Turn On Delay Time | Threshold Voltage | Neg Supply Voltage-Nom (Vsup) | On-State Resistance (Max) | Supplier Device Package | -3db Bandwidth | Power Dissipation-Max | Continuous Drain Current (ID) | Max Junction Temperature (Tj) | Transistor Application | Drain-source On Resistance-Max | Turn-Off Delay Time | Quiescent Current | Logic Function | Transistor Element Material | FET Type | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds | Rise Time | Fall Time (Typ) | Gate to Source Voltage (Vgs) | Drain to Source Breakdown Voltage | FET Feature | Drain Current-Max (Abs) (ID) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Pulsed Drain Current-Max (IDM) | Feedback Cap-Max (Crss) | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Input Voltage (Min) | Input Voltage (Max) | Resolution | Supply Type | Integral Nonlinearity (INL) | Neg Supply Voltage-Max (Vsup) | Number of Input Lines | Number of Output Lines | Switch-on Time-Max | Switch-off Time-Max | Normal Position | Off-state Isolation-Nom | On-state Resistance Match-Nom | Voltage - Supply, Single/Dual (±) | Signal Current-Max | Duty Cycle | On-State Resistance | Module/Board Type | Switch Circuit | Voltage - Supply, Single (V+) | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Dual (V±) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SY54017ARMG | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 10 Weeks | Surface Mount | Tube | 2008 | Precision Edge® | Active | 2 (1 Year) | 85°C | -40°C | 2.5V | ROHS3 Compliant | Lead Free | No | 16 | 16-VFQFN Exposed Pad, 16-MLF® | 2.625V | 2.375V | Surface Mount | -40°C~85°C TA | 20mA | SY54017 | 2 | 1 | Networking | 225 ps | 350 ps | 16-MLF® (3x3) | 21mA | Multiplexer | Single | 2 | 1 | 53 % | 1.2V 1.8V 2.5V | 2:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HV2803/AHA | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 17 Weeks | Tray | Active | 3 (168 Hours) | 132 | 12mm | ROHS3 Compliant | 132-TFBGA, CSPBGA | 6.3V | 3V | 1.2mm | Surface Mount | 0°C~70°C | CMOS | 16 | BOTTOM | BALL | NOT SPECIFIED | 6V | NOT SPECIFIED | YES | 0.8mm | 32 | 70°C | Ultrasound | 8mA | -6V | 15Ohm | 50MHz | 125°C | -100V | 100V | -4.5V | 5ns | 5ns | NO | -70 dB | 10Ohm | 3A | 10.4Ohm | SPST | 1:1 | ±4.5V~6.3V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MT8816AF1 | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | Surface Mount | Tray | Active | 3 (168 Hours) | 44 | 10mm | ROHS3 Compliant | No | 44 | 44-TQFP | 13.2V | 4.5V | 1.2mm | 10mm | 65Ohm | Surface Mount | -40°C~85°C TA | CMOS | 1 | e3 | MATTE TIN | QUAD | GULL WING | 5V | 44 | Voltage | 0.8mm | 1 | Multiplexer or Switches | CROSS POINT SWITCH | Telecommunications | -7V | 65Ohm | 45MHz | 2 B | Single | 3 LSB | 95 dB | 5Ohm | 4.5V~13.2V ±4.5V | 8:16 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DN2530N8-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 18 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 4.6mm | ROHS3 Compliant | Lead Free | Tin | No | 3 | TO-243AA | No SVHC | 1.6mm | 2.6mm | Surface Mount | 52.786812mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | FLAT | 260 | 40 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 1.6W | 10 ns | 1.6W Ta | 200mA | SWITCHING | 15 ns | SILICON | N-Channel | 12 Ω @ 150mA, 0V | 300pF @ 25V | 15ns | 15 ns | 20V | 300V | Depletion Mode | 0.2A | 200mA Tj | 5 pF | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN0109N3-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | Through Hole | Bulk | 2009 | Active | 1 (Unlimited) | 3 | EAR99 | ROHS3 Compliant | Tin | 3 | LOW THRESHOLD | TO-226-3, TO-92-3 (TO-226AA) | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | BOTTOM | NOT APPLICABLE | NOT APPLICABLE | 1 | 1 | SINGLE WITH BUILT-IN DIODE | 1W | 3 ns | 1W Tc | 350mA | SWITCHING | 3Ohm | 6 ns | SILICON | N-Channel | 3 Ω @ 1A, 10V | 2.4V @ 1mA | 65pF @ 25V | 5ns | 5 ns | 20V | 90V | 350mA Tj | 8 pF | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LND150N3-G-P003 | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Through Hole | Tape & Reel (TR) | 2014 | yes | Active | 1 (Unlimited) | 3 | 5.21mm | ROHS3 Compliant | Tin | 3 | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | BOTTOM | 1 | 1 | Single | 90 ns | 740mW Ta | 30mA | SWITCHING | 100 ns | SILICON | N-Channel | 1000 Ω @ 500μA, 0V | 10pF @ 25V | 450ns | 1.3 μs | 20V | 500V | Depletion Mode | 30mA Tj | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP2110K1-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | Tin | No | 3 | LOW THRESHOLD | TO-236-3, SC-59, SOT-23-3 | 950μm | 1.3mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | DUAL | GULL WING | 260 | 40 | 1 | Other Transistors | 1 | Single | 360mW | 4 ns | 360mW Ta | 120mA | SWITCHING | 5 ns | SILICON | P-Channel | 12 Ω @ 500mA, 10V | 3.5V @ 1mA | 60pF @ 25V | 5ns | 5 ns | 20V | -100V | 120mA Tj | 100V | 8 pF | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN2124K1-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | Surface Mount | Tape & Reel (TR) | 2005 | Active | 1 (Unlimited) | 3 | EAR99 | 2.9mm | ROHS3 Compliant | 3 | LOW THRESHOLD | TO-236-3, SC-59, SOT-23-3 | 950μm | 1.3mm | Surface Mount | 1.437803g | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 40 | 1 | FET General Purpose Power | Not Qualified | 1 | Single | 360mW | 4 ns | 360mW Tc | 134mA | SWITCHING | 7 ns | SILICON | N-Channel | 15 Ω @ 120mA, 4.5V | 2V @ 1mA | 50pF @ 25V | 2ns | 2 ns | 20V | 240V | 134mA Tj | 5 pF | 3V 4.5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2502N8-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | Active | 1 (Unlimited) | 3 | EAR99 | 4.6mm | ROHS3 Compliant | 4 | LOGIC LEVEL COMPATIBLE | TO-243AA | 1.6mm | 2.6mm | Surface Mount | 52.786812mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | FLAT | 260 | 40 | R-PSSO-F3 | Not Qualified | 1 | DRAIN | Single | 1.6W | 10 ns | 1.6W Ta | 630mA | SWITCHING | 2Ohm | 15 ns | SILICON | P-Channel | 2 Ω @ 1A, 10V | 2.4V @ 1mA | 125pF @ 20V | 11ns | 11 ns | 20V | -20V | 0.63A | 630mA Tj | 3.3A | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN2425N8-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 4.6mm | ROHS3 Compliant | No | 4 | LOGIC LEVEL COMPATIBLE | TO-243AA | 1.6mm | 2.6mm | Surface Mount | 52.786812mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | FLAT | 260 | 40 | R-PSSO-F3 | 1 | 1 | DRAIN | Single | 1.6W | 5 ns | 1.6W Tc | 480mA | SWITCHING | 25 ns | SILICON | N-Channel | 3.5 Ω @ 500mA, 10V | 2.5V @ 1mA | 200pF @ 25V | 10ns | 10 ns | 20V | 250V | 480mA Tj | 25V | 3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2520N8-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 12 Weeks | Surface Mount | Tape & Reel (TR) | 2009 | Active | 1 (Unlimited) | 3 | EAR99 | 4.6mm | ROHS3 Compliant | Lead Free | Tin | No | 4 | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD | TO-243AA | 1.6mm | 2.6mm | Surface Mount | 52.786812mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FLAT | 260 | 40 | R-PSSO-F3 | 1 | Other Transistors | 1 | DRAIN | Single | 1.6W | 10 ns | 1.6W Ta | 260mA | SWITCHING | 20 ns | SILICON | P-Channel | 12 Ω @ 200mA, 10V | 2.4V @ 1mA | 125pF @ 25V | 15ns | 15 ns | 20V | -200V | 0.26A | 260mA Tj | 200V | 2A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP2450N8-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2007 | Active | 1 (Unlimited) | 3 | EAR99 | 4.6mm | ROHS3 Compliant | No | 4 | TO-243AA | 1.6mm | 2.6mm | Surface Mount | 52.786812mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | FLAT | 260 | 40 | R-PSSO-F3 | 1 | 1 | DRAIN | Single | 1.6W | 10 ns | 1.6W Ta | 160mA | SWITCHING | 45 ns | SILICON | P-Channel | 30 Ω @ 100mA, 10V | 3.5V @ 1mA | 190pF @ 25V | 25ns | 25 ns | 20V | -500V | 160mA Tj | 500V | 0.8A | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DN3765K4-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 8 Weeks | Surface Mount | Tape & Reel (TR) | 2008 | Active | 3 (168 Hours) | 2 | EAR99 | 6.73mm | ROHS3 Compliant | Lead Free | 3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | No SVHC | 2.39mm | 6.1mm | Surface Mount | 3.949996g | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | Matte Tin (Sn) | GULL WING | 260 | NOT SPECIFIED | R-PSSO-G2 | 1 | Not Qualified | 1 | DRAIN | Single | 2.5W | 50 ns | 2.5W Ta | 300mA | SWITCHING | 8Ohm | 75 ns | SILICON | N-Channel | 8 Ω @ 150mA, 0V | 825pF @ 25V | 75ns | 100 ns | 20V | 650V | Depletion Mode | 300mA Tj | 0.5A | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0104N8-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 4.6mm | ROHS3 Compliant | Lead Free | Tin | No | 4 | LOW THRESHOLD, LOGIC LEVEL COMPATIBLE | TO-243AA | 1.6mm | 2.6mm | Surface Mount | 52.786812mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FLAT | 260 | 40 | R-PSSO-F3 | 1 | FET General Purpose Power | 1 | DRAIN | Single | 1.6W | 3 ns | 1.6W Tc | 630mA | SWITCHING | 2Ohm | 6 ns | SILICON | N-Channel | 2 Ω @ 1A, 10V | 1.6V @ 500μA | 70pF @ 20V | 7ns | 7 ns | 20V | 40V | 0.63A | 630mA Tj | 3V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN2450N8-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Surface Mount | Tape & Reel (TR) | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 4.6mm | ROHS3 Compliant | Tin | 3 | FAST SWITCHING | TO-243AA | 1.6mm | 2.6mm | Surface Mount | 52.786812mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | FLAT | 260 | 40 | 1 | FET General Purpose Power | Not Qualified | 1 | DRAIN | Single | 1.6W | 10 ns | 1.6W Ta | 250mA | SWITCHING | 25 ns | SILICON | N-Channel | 13 Ω @ 400mA, 10V | 4V @ 1mA | 150pF @ 25V | 10ns | 10 ns | 20V | 500V | 0.25A | 250mA Tj | 0.75A | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN3205N3-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Bulk | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | Lead Free | No | 3 | HIGH INPUT IMPEDANCE | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | 1 | 1 | Single | 1W | 10 ns | 1W Tc | 1.2A | SWITCHING | 25 ns | SILICON | N-Channel | 300m Ω @ 3A, 10V | 2.4V @ 10mA | 300pF @ 25V | 15ns | 25 ns | 20V | 50V | 1.2A Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DN2540N5-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | Through Hole | Tube | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | No | 3 | LOW THRESHOLD | TO-220-3 | No SVHC | 22.86mm | 4.83mm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | MATTE TIN | 1 | FET General Purpose Power | 1 | TO-220AB | DRAIN | Single | 15W | 10 ns | -1.5V | 15W Tc | 500mA | SWITCHING | 15 ns | SILICON | N-Channel | 25 Ω @ 120mA, 0V | 300pF @ 25V | 15ns | 20 ns | 20V | 400V | Depletion Mode | 0.5A | 500mA Tj | 0.5A | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP2206N3-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Bulk | 1998 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | No | 3 | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | 1 | 1 | Single | 1W | 4 ns | 740mW Tc | 640mA | SWITCHING | 0.9Ohm | 16 ns | SILICON | P-Channel | 900m Ω @ 3.5A, 10V | 3.5V @ 10mA | 450pF @ 25V | 16ns | 22 ns | 20V | -60V | 0.64A | 640mA Tj | 60V | 40 pF | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0110N3-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Bulk | 2011 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | Lead Free | No | 3 | LOGIC LEVEL COMPATIBLE | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | 1 | FET General Purpose Power | 1 | Single | 1W | 2 ns | 1W Tc | 350mA | SWITCHING | 3Ohm | 6 ns | SILICON | N-Channel | 3 Ω @ 500mA, 10V | 2V @ 500μA | 60pF @ 25V | 3ns | 3 ns | 20V | 100V | 350mA Tj | 8 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2104N3-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Bulk | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | Lead Free | 3 | LOW THRESHOLD | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | NOT APPLICABLE | NOT APPLICABLE | 1 | Not Qualified | 1 | Single | 740mW | 4 ns | 740mW Ta | -250mA | SWITCHING | 6Ohm | 5 ns | SILICON | P-Channel | 6 Ω @ 500mA, 10V | 2V @ 1mA | 60pF @ 25V | 4ns | 4 ns | 20V | -40V | 175mA Tj | 40V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN2106N3-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Bulk | 2001 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | Tin | No | 3 | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | BOTTOM | 1 | 1 | Single | 1W | 3 ns | 1W Tc | 300mA | SWITCHING | 4Ohm | 6 ns | SILICON | N-Channel | 4 Ω @ 500mA, 10V | 2.4V @ 1mA | 50pF @ 25V | 5ns | 5 ns | 20V | 60V | 300mA Tj | 5 pF | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TN0702N3-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 7 Weeks | Through Hole | Bulk | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | 3 | LOGIC LEVEL COMPATIBLE, HIGH INPUT IMPEDANCE | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | NOT APPLICABLE | NOT APPLICABLE | 1 | FET General Purpose Power | Not Qualified | 1 | Single | 1W | 20 ns | 1W Tc | 530mA | SWITCHING | 30 ns | SILICON | N-Channel | 1.3 Ω @ 500mA, 5V | 1V @ 1mA | 200pF @ 20V | 20ns | 20 ns | 20V | 20V | 0.6A | 530mA Tj | 60 pF | 2V 5V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN2406L-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Bulk | 2008 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | No | 3 | HIGH INPUT IMPEDANCE | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - annealed | BOTTOM | 1 | FET General Purpose Power | 1 | Single | 1W | 8 ns | 1W Tc | 190mA | SWITCHING | 6Ohm | 23 ns | SILICON | N-Channel | 6 Ω @ 500mA, 10V | 2V @ 1mA | 125pF @ 25V | 8ns | 24 ns | 20V | 240V | 190mA Tj | 20 pF | 2.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VP2450N3-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Bulk | 2007 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | No | 3 | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 1 | 1 | Single | 1W | 10 ns | 740mW Ta | 100mA | SWITCHING | 45 ns | SILICON | P-Channel | 30 Ω @ 100mA, 10V | 3.5V @ 1mA | 190pF @ 25V | 25ns | 25 ns | 20V | -500V | 100mA Tj | 500V | 20 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TP2540N3-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | Through Hole | Bulk | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | No | 3 | LOW THRESHOLD | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 453.59237mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) | BOTTOM | 1 | Other Transistors | 1 | Single | 740mW | 10 ns | 740mW Ta | 86mA | SWITCHING | 20 ns | SILICON | P-Channel | 25 Ω @ 100mA, 10V | 2.4V @ 1mA | 125pF @ 25V | 10ns | 10 ns | 20V | -400V | 0.086A | 86mA Tj | 400V | 25 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VN2460N3-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 6 Weeks | Through Hole | Bulk | 2013 | Active | 1 (Unlimited) | 3 | EAR99 | 5.21mm | ROHS3 Compliant | No | 3 | LOW THRESHOLD | TO-226-3, TO-92-3 (TO-226AA) | 5.33mm | 4.19mm | Through Hole | 219.992299mg | -55°C~150°C TJ | MOSFET (Metal Oxide) | ENHANCEMENT MODE | e3 | Matte Tin (Sn) - annealed | BOTTOM | WIRE | 1 | FET General Purpose Power | 1 | Single | 1W | 10 ns | 1W Ta | 160mA | SWITCHING | 25Ohm | 25 ns | SILICON | N-Channel | 20 Ω @ 100mA, 10V | 4V @ 2mA | 150pF @ 25V | 10ns | 20 ns | 20V | 600V | 160mA Tj | 25 pF | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DN2535N5-G | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 5 Weeks | Through Hole | Tube | 2008 | Active | 1 (Unlimited) | 3 | EAR99 | 10.67mm | ROHS3 Compliant | Lead Free | Tin | 3 | LOW THRESHOLD | TO-220-3 | No SVHC | 9.02mm | 4.83mm | Through Hole | 6.000006g | -55°C~150°C TJ | MOSFET (Metal Oxide) | e3 | NOT SPECIFIED | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | 1 | TO-220AB | DRAIN | Single | 15W | 10 ns | 15W Tc | 500mA | SWITCHING | 15 ns | SILICON | N-Channel | 25 Ω @ 120mA, 0V | 300pF @ 25V | 15ns | 20 ns | 20V | 350V | Depletion Mode | 0.5A | 500mA Tj | 0.5A | 0V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AC164339 | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
14 Weeks | 2005 | Active | 1 (Unlimited) | ROHS3 Compliant | Lead Free | Module | Socket Module - SOIC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AC164324 | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | 2007 | Active | 1 (Unlimited) | ROHS3 Compliant | Module | Socket Module - 8DFN/16QFN | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AC164325 | Microchip Technology | $0.00 |
Min: 1 Mult: 1 |
download | 14 Weeks | 2005 | Active | 1 (Unlimited) | Non-RoHS Compliant | Lead Free | 8 | Module | Socket Module - MSOP |